• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A sensor assembly (200) according to the invention comprises an outer housing and at least one high impedance transducer (204) positioned within the outer housing. The sensor package also includes a buffer circuit (250) including at least one wide bandgap semiconductor device (252/256) of greater than 1 electron volts positioned within the outer housing. The buffer circuit is operatively connected to at least one high impedance transmitter.
    公开号:CH704647B1
    申请号:CH00390/12
    申请日:2012-03-20
    公开日:2017-07-14
    发明作者:Arthur Campbell Lam；Nmn Tilak Vinayak
    申请人:Gen Electric；
    IPC主号:
    专利说明:

    description
    Background of the Invention The subject matter described below relates generally to sensors, and more particularly to sensors for high temperature environments and a data acquisition system.
    At least some known high impedance sensor assemblies include probes made for high temperature environments up to and including about 225 degrees Celsius (° C) (437 degrees Fahrenheit (° F)). However, the known electronic devices, when coupled with these known probes for communication purposes, may not operate consistently and reliably in environments with temperatures in excess of about 225 ° C (437 ° F). Many applications in the industry include environments with temperatures that range substantially from about -55 ° C (-67 ° F) to about 600 ° C (1112 ° F), essentially continuously, i. with exposure periods over a longer period, e.g. exceed about 5 000 hours. Therefore, known high-impedance, high-impedance sensor assemblies require special equipment for adjustment to conditions to achieve operation with a desired signal-to-noise ratio (SNR) and survivability in harsh, high temperature environments up to and including approximately 225 ° C (437 ° F ) and to facilitate it.
    Such special equipment for adaptation to the conditions may include the use of additional cooling devices to facilitate the operation of electronic devices within the sensor assemblies in high temperature environments at and / or above about 225 ° C (437 ° F). Such additional cooling devices may include heat exchange devices such as heat exchangers. Include cooling coils coupled to a fluid-based cooling system. However, these additional cooling devices increase the cost of assembling the sensor assemblies and add another potential source of error to them. In addition, the size and / or weight of the additional cooling devices are often so high that their use is impractical.
    Also, such special equipment may include mineral-insulated (M1) cables for conforming to the conditions, which facilitates operational connection to devices that receive signals transmitted by the sensors. However, while such M1 cables are more durable and robust than standard shielded cables, they are sometimes referred to as "hard-wired" but are more expensive to purchase than standard shielded cables. Due to the robustness of the cable, flexing of the MI cable is difficult for industrial installation. For this purpose, special tools are required, which cause even higher costs during installation. In addition, in high temperature environments of about 225 ° C (437 ° F) or above, the electronic devices are disconnected from the probes. In such situations, the electronic devices may be positioned a considerable distance from the probes, further increasing the cost of assembly, and possibly reducing operational reliability due to unpredictable cable defects and increased susceptibility to interference.
    Brief Description of the Invention On the one hand, a sensor assembly is provided. The sensor assembly includes an outer housing and at least one high impedance transducer selected from a sensor class including a piezoelectric device and / or a photodiode positioned within the outer housing. The sensor assembly also includes a buffer circuit including at least one wide bandgap semiconductor device of greater than 1 electronvolts positioned within the outer housing. The buffer circuit is operatively connected to at least one high impedance transmitter.
    On the other hand, a method for assembling a sensor assembly is provided, which is not claimed. The method includes positioning at least one high impedance transmitter within a housing. The method also includes creating a buffer circuit including providing a semiconductor substrate having a large bandgap of greater than 1 electron volt and defining at least one wide bandgap semiconductor device thereon. The method also includes positioning the buffer circuit within the housing. The method also includes operatively connecting the buffer circuit to at least one high impedance transmitter.
    In addition, a data acquisition system (DAS) is provided. The DAS includes at least one DAS cabinet and at least one I / O terminal block coupled to at least one DAS cabinet for communication purposes. DAS also includes a variety of sensor assemblies. Each sensor assembly of the plurality of sensor assemblies includes an outer case and at least one high impedance transmitter selected from a sensor class including a piezoelectric device and / or a photodiode positioned within the outer case. Each sensor assembly of the plurality of sensor assemblies also includes a buffer circuit comprising at least one wide bandgap semiconductor device of greater than 1 electron volt positioned within the outer case. The buffer circuit is operatively coupled to at least one high impedance transmitter and the at least one I / O terminal block is operatively connected to each of the sensor assemblies.
    BRIEF DESCRIPTION OF THE DRAWINGS [0008] The embodiments described herein may be better understood when the following description is taken in conjunction with the accompanying drawings.
    Fig. 1 is a schematic representation of a sensor assembly according to the prior art;
    FIG. 2 is a schematic illustration of an exemplary sensor assembly; FIG.
    Fig. 3 is a schematic representation of an electronic unit which can be used in conjunction with the sensor assembly shown in Fig. 2;
    Fig. 4 is a schematic illustration of an exemplary data acquisition system (DAS) that may use the sensor assembly shown in Fig. 2; and
    FIG. 5 is a flowchart of an exemplary method of assembling the sensor assembly shown in FIG. 2.
    DETAILED DESCRIPTION OF THE INVENTION FIG. 1 is a schematic representation of a prior art sensor package 100. The sensor subassembly 100 comprises a sensor subregion 102. The sensor subregion 102 comprises a sensor 104, which is positioned within an outer housing 106. The sensor package 100 also includes an electronics subassembly 110. The electronics subassembly 110 includes an electronics component 112 and a connector component 114. The electronics component 112 includes electronic devices 116 within a housing 118. Electronic devices 116 process the signals that may be present from the sensor 104 in order to forward them via connection component 1 to other devices (not shown). The sensor package 100 also includes a mineral insulated (Ml) cable 120, with which the outer housing 106 is coupled to the electronics subassembly 110. The M1 cable 120 is of any length to facilitate positioning of the electronic devices 116 in non-high temperature environments, i. Environments with temperatures less than about 225 ° C (437 ° F).
    Some embodiments of the prior art sensor assembly 100 may include electronic devices 126 (shown in dashed outline) positioned within the outer housing 106. In these embodiments, the sensor assembly 100 may include the non-electronics component 112 and the Ml cable 120, and the connection component 114 is directly coupled to the outer housing 106. In addition, in situations involving the positioning of the outer housing 106, including electronic devices 126, in environments including temperatures up to and including about 225 ° C (437 ° F) and above, a heat dissipation system 130 (shown as a dashed outline) is associated with the exterior Housing 106 coupled. The heat dissipation system 130 includes a heat dissipation fluid inlet conduit 132, a heat transfer device 134, e.g. Cooling coils, and a heat dissipation fluid outlet conduit 136. The heat transfer device 134 is positioned proximate the electronic devices 126 to help keep the devices 126 at temperatures less than about 225 ° C (437 ° F), i. at temperatures of about 125 ° C (257 ° F).
    In operation, the outer housing 106 is coupled to or located in close proximity to a measured variable. Such variables may include pressure, temperature and / or flow. The sensor 104 generates signals representative of the measured variables and transmits them via the Ml cable 120 to electronic devices 116. The electronic devices 116 process the signal received from the sensor 104 and transmit a conditioned signal the connection component 114 for further transmission to other devices and systems (not shown). In some embodiments, the sensor 104 transmits signals to the electronic devices 126. In those embodiments, the heat sink fluid (not shown) is routed through the fluid inlet line 132, the heat transfer device 134, and the fluid outlet line 136 such that the temperature of the electronic devices 126 is less than about 225 ° C (437 ° F).
    FIG. 2 is a schematic illustration of an exemplary sensor assembly 200. In the exemplary embodiment, the sensor assembly 200 includes a transmitter or sensor 204 positioned within an outer housing 206. In the exemplary embodiment, the sensor 204 is a high impedance device, which may be, inter alia, a piezoelectric device and / or a photodiode. Outer case 206 is coupled to or located in proximity to a device having measured variables. In the exemplary embodiment, the outer housing 206 is configured for docking with a device that could include, among other things, gas turbines, steam turbines, gasifiers, heat recovery steam generators, and heat exchangers (not shown). Such measured variables may include, but are not limited to, deflection, velocity and acceleration of selected components, e.g. Turbine shafts using proximity sensors, velocity sensors and / or accelerometers (not shown). Alternatively, such devices and measured variables may include, but are not limited to, speed and acceleration of drilling waves for exploration of oil wells (not shown). The sensor assembly 200 also includes electronic devices 216 operably coupled to the sensor 204, wherein both the devices 216 and the sensor 204 are positioned within the housing 206. The sensor assembly 200 also includes a connection component 220 that is operatively connected to the electronic devices 216 and other devices and systems (not shown in FIG. 2). The sensor assembly 200 also includes a shield 230 that extends over the electronic devices 216 and the sensor 204. The shield 230 provides electromagnetic interference (EMI) resistance and facilitates achieving a desired signal-to-noise ratio (SNR) with respect to the signals transmitted from the sensor 204 to the interconnect component 220 via the electronic devices 216. Shield 230 is electrically grounded and may be referenced to sensor 204 and electronic devices 216. In addition, the use of Ml cables is essentially avoided.
    FIG. 3 is a schematic representation of the electronic devices 216 that may be used with the sensor assembly 200. The electronic devices 216 include a conditioning or buffer circuit 250 that is operatively connected to the sensor 204. The buffer circuit 250 processes signals received from the sensor 204 to be forwarded to other devices via the connection component 220 (not shown in FIG. 3). In the exemplary embodiment, the buffer circuit 250 includes any devices that enable the operation of the sensor assembly 200 as described including, among other things, NPO type ceramic dielectric capacitors 252 and sheet resistors 254. In the exemplary embodiment, the buffer circuit 250 also includes at least one operational amplifier 256, wherein the operational amplifier 256 is a wide bandgap semiconductor device. The term large bandgap semiconductor in this sense describes semiconductor materials with electronic band gaps of more than about 1 to 2 electron volts (eV). In addition, in the exemplary embodiment, the material for the wide bandgap semiconductor is silicon carbide (SiC), which forms a substrate 258 of the operational amplifier 256. Alternatively, any material for a wide bandgap semiconductor can be used to form the substrate 258, including alumina, gallium nitride (GaN), aluminum nitride (AIN), indium nitride (InN), and other mixtures of these materials.
    In addition, in the exemplary embodiment, the buffer circuit 250 is defined on a substrate 260 formed of AIN. Alternatively, for a wide bandgap semiconductor, any material may be used to form the substrate 260, including GaN, SiC, InN, and other mixtures of these materials. Also, in the exemplary embodiment, the buffer circuit 250 consists of either a voltage amplifier circuit or a charge amplifier circuit. Alternatively, any circuit configuration that enables operation of the buffer circuit 250 and the sensor assembly 200 as described herein is used. In addition, in the exemplary embodiment, the buffer circuit 250 includes a robust circuit architecture that substantially allows the operation of the sensor assembly 200 in ambient conditions in a range of about -55 ° C (-67 ° F) to about 600 ° C (1112 ° F) substantially continuous, ie with exposure periods over an extended period, e.g. more than about 5000 hours. In the exemplary embodiment, examples of high temperature devices capable of producing such high temperature conditions include, but are not limited to, gas turbines, steam turbines, gasifiers, heat recovery steam generators, and heat exchangers (not shown). Alternatively, such devices may include, among other things, tools and equipment for exploration of oil wells.
    FIG. 4 is a schematic illustration of an exemplary data acquisition system (DAS) 300 that may use a variety of sensor assemblies 200. In the exemplary embodiment, the DAS 300 is a stand-alone system for data storage and display. In some embodiments, the DAS 300 is part of a large system, including, but not limited to, a SCADA (supervisory control and data acquisition) system. In the exemplary embodiment, the DAS 300 also includes a data cable 302, which is a standard cable that is less expensive and more flexible as compared to the Ml cable 120 (shown in FIG. 1). Therefore, the use of Ml cables is essentially no longer necessary. The data cable 302 is coupled to the connection component 220 of the sensor assembly 200. Additionally, in the exemplary embodiment, the DAS 300 includes at least one I / O terminal block 304 (shown only once in FIG. 3) operatively connected to each of the sensor assemblies 200 via the data cable 302. In the exemplary embodiment, the DAS 300 also includes at least one DAS cabinet 306 operatively connected to each I / O terminal block 304. DAS cabinet 306 is configured for processing and information display (not shown) to support DAS 300 as described herein. In the exemplary embodiment, the DAS 300 also includes an operator station 308 that is operatively connected to the DAS cabinet 306.
    FIG. 5 is a flowchart of an exemplary method 400 for assembling the sensor assembly 200 (shown in FIG. 2). In the exemplary embodiment, at least one high impedance transducer or sensor 204 (shown in FIG. 2) is positioned 402 within the outer housing 206 (shown in FIG. 2). The buffer circuit 250 (shown in FIG. 3) is fabricated 404; such fabrication 404 includes providing a wide bandgap semiconductor substrate 260 (shown in FIG. 3) and defining at least one wide bandgap semiconductor device thereon, e.g. of the operational amplifier 256. In the exemplary embodiment, the buffer circuit 250 is also positioned 406 within the outer housing 206. Additionally, in the exemplary embodiment, the buffer circuit 250 is operatively connected 408 to the sensor 204.
    Here exemplary embodiments of sensor assemblies are described, which facilitate the improved operation in industry and commerce over known sensor assemblies. The above-described methods and apparatus facilitate the operation of sensor assemblies in harsh, high temperature environments up to and including about 225 ° C (437 ° F). In particular, survivability and proper operation of the sensor assemblies described herein are extended to temperatures up to and including about 600 ° C (1112 ° F), unlike known sensor assemblies that can only be used at temperatures not exceeding about 125 ° C (257 ° F) exceed. In addition, the associated exposure periods for the sensor assemblies described herein can be extended substantially continuously to over 5000 hours. Such methods and devices also facilitate the elimination of Ml cables and additional cooling systems, thereby reducing the cost of manufacturing, assembling, and mounting the sensor assemblies. In addition, unlike known sensor assemblies, the increased robustness of the sensor assemblies described herein facilitates the mounting of sensor devices in areas previously inaccessible due to the harsh high temperature environment and the limitations of known sensor assemblies. In addition, in contrast to known sensor assemblies, the sensor assemblies described herein facilitate operation with a desired signal-to-noise ratio (SNR). In particular, the use of high impedance sensor devices, the positioning of such sensor devices in the vicinity of the conditioning electronics, and the inclusion of the sensors and electronics in an EMI shield, improves the SNR compared to the SNR of known sensor assemblies.
    While the invention has been described in terms of various specific embodiments, those skilled in the art will recognize that the invention can be practiced with variation within the spirit and scope of the claims.
    A sensor package 200 includes an outer housing 206 and at least one high impedance transducer 204 positioned within the outer housing. The sensor package also includes a buffer circuit 250 including at least one wide bandgap semiconductor device 252/256 of greater than 1 electron volt positioned within the outer housing. The buffer circuit is operatively connected to at least one high impedance transmitter.
    LIST OF REFERENCES [0020] Prior Art Sensor Circuit 102 Sensor Subrange 104 Sensor 106 Outer Case 110 Electronics Subassembly 112 Electronics Component 114 Interconnect Component 116 Electronic Devices 118 Housing 120 Mineral Insulated (Ml) Cable 126 Electronic Devices 130 Heat Dissipation System 132 Heat Dissipation Fluid Inlet Line 134 Heat Transfer Device 136 Heat Dissipation Fluid Outlet Line 200 Exemplary Sensor Assembly 204 Sensor 206 Outer Case 216 Electronic Devices
    权利要求:
    Claims (8)
    [1]
    220 Connection Component 230 Shield 250 Buffer (Conditioning) Circuit 252 NPO Type Ceramic Dielectric Capacitors 254 Film Resistors 256 Operational Amplifier 258 Operational Amplifier Substrate 260 Buffer Circuit Subsystem 300 Data Acquisition System (DAS) 302 Data Cable 304 I / O Terminal Block 306 DAS Enclosure 308 Operator Station 400 Procedure 402 Positioning of at least one High Impedance Transmitter ... 404 Creating a Buffer Circuit Including the ... 406 Positioning the Buffer Circuit Inside the Case 408 Operationally Connecting the Buffer Circuit to ... Claims
    A sensor package (200) comprising: an outer housing (206); at least one high impedance transducer (204) selected from a sensor class comprising a piezoelectric device and / or a photodiode positioned within the outer housing; and a buffer circuit (250) comprising at least one wide band gap semiconductor device (252/256) greater than 1 electron volt positioned within the outer housing, wherein the buffer circuit is operatively connected to the at least one high impedance transmitter (204).
    [2]
    The sensor package (200) of claim 1, wherein the sensor assembly further includes an electromagnetic interference shield (230) extending over at least a portion of the high impedance transmitter (204) and the buffer circuit (250).
    [3]
    The sensor assembly (200) of claim 1, wherein the at least one wide bandgap semiconductor device (252/256) is an operational amplifier (256).
    [4]
    The sensor assembly (200) of claim 1, wherein said at least one wide bandgap semiconductor device (252/256) includes a substrate (258) having at least one of: silicon carbide, i. SiC, gallium nitride, i. GaN, aluminum nitride, i. AIN or indium nitride, i. InN, whereby the sensor assembly (200) is particularly formable to operate for periods of greater than 5000 hours in an environment having temperatures within a range of -55 ° C to 600 ° C.
    [5]
    The sensor package (200) of claim 1, wherein the buffer circuit (250) further comprises a wide bandgap semiconductor substrate (260) greater than 1 electron volts.
    [6]
    A data acquisition system (300) comprising: at least one data acquisition system cabinet (306); at least one I / O terminal block (304) connected for communication with the at least one data acquisition system cabinet; a plurality of sensor assemblies (200), each of the sensor assemblies comprising: - an outer housing (206); - at least one high impedance transducer (204) selected from a sensor class comprising a piezoelectric device and / or a photodiode disposed within said outer housing; and - a buffer circuit (250) comprising at least one high bandgap semiconductor device (252/256) greater than 1 electron volt disposed within said outer housing, the buffer circuit having at least one high impedance transmitter (204) operable wherein the at least one I / O terminal block (304) is operatively connected to each of the sensor assemblies (200).
    [7]
    The data acquisition system (300) of claim 6, wherein the sensor assembly (200) further comprises an electromagnetic interference shield (230) extending over at least a portion of the at least one high impedance transmitter (204) and the buffer circuit (250) ,
    [8]
    The data acquisition system (300) of claim 6, wherein the at least one wide bandgap semiconductor device (252/256) is an operational amplifier (256).
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    同族专利:
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    US9041384B2|2015-05-26|
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    JP2012230100A|2012-11-22|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US5801422A|1994-11-02|1998-09-01|Lsi Logic Corporation|Hexagonal SRAM architecture|
    US5801442A|1996-07-22|1998-09-01|Northrop Grumman Corporation|Microchannel cooling of high power semiconductor devices|
    CN1094653C|1999-12-10|2002-11-20|中国科学院上海冶金研究所|Technology for manufacturing chip of high-temp pressure sensor|
    JP2004506186A|2000-08-09|2004-02-26|エンデヴコ・コーポレーション|High and low frequency output transducers|
    EP1700002B1|2003-11-18|2017-07-05|Halliburton Energy Services, Inc.|High temperature environment tool system and method|
    US7164995B2|2005-02-04|2007-01-16|Tektronix, Inc.|Differential termination and attenuator network for a measurement probe|
    US7610813B2|2006-09-29|2009-11-03|Intel Corporation|Method and apparatus for a self-powered RFID-readable pedometer|DE102012019433A1|2012-10-04|2014-04-24|Krohne Optosens Gmbh|Device for determining a characteristic of a medium|
    EP3164699B1|2015-03-20|2021-07-28|Uster Technologies AG|Capacitive sensor assembly for a textile testing device|
    KR20170112618A|2016-04-01|2017-10-12|주식회사 만도|Shielding structure of electro control unit|
    法律状态:
    2017-03-15| NV| New agent|Representative=s name: GENERAL ELECTRIC TECHNOLOGY GMBH GLOBAL PATENT, CH |
    优先权:
    申请号 | 申请日 | 专利标题
    US13/069,509|US9041384B2|2011-03-23|2011-03-23|Sensors for high-temperature environments and method for assembling same|
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